Natale Ianno.

Lott Professor of Electrical and Computer Engineering
Electrical and Computer Engineering

E417.1 Nebraska Hall
Lincoln, NE 68588
(402) 472-1965
nianno1@unl.edu
Education
  • Ph.D., 1981 University of Illinois Urbana, IL
  • M.S., 1980 University of Illinois Urbana, IL
  • B.S., 1978 University of Illinois Urbana, IL

Research Interests
  • Thin Film Deposition including sputtering and PECVD
  • High Density Plasma Processing
  • Nanoscale processing
  • In-situ optical process monitroing

Selected Publications
  • J. S. Schrader. J. L. Huguenin-Love, R. J. Soukup, N. J. Ianno, C. L. Exstrom, S. A. Darveau, R. N. Udey, V. L. Dalal, Solar Energy Materials and Solar Cells 90, 2338-2345 (2006).
  • J. L. Huguenin-Love, R. J. Soukup, N. J. Ianno, J. S. Schrader, D. W. Thompson, and V. L. Dalal, "Optical and Crystallographic Analysis of Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique," 9, 759-763 (2006).
  • D. Speckman, D. Marvin, J. Matossian, N. Ianno and W. Stuckey, "Atomic Oxygen Testing of MgF2 Coatings" Proc. 2006 IEEE Photovoltaic Specialists Conf., 1838-1841 (2006).
  • J. L. Huguenin-Love, R. J. Soukup, N. J. Ianno, J. S. Schrader, and V. L. Dalal, "The Properties of Ge-C Thin Films Deposited using Dual Hollow Cathode", Proc. 2006 IEEE Photovoltaic Specialists Conf. , 114-117 (2006).
  • J. L. Huguenin-Love, R. J. Soukup, N. J. Ianno, J. S. Schrader, and V. L. Dalal, "Thin films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique", Mater. Res. Soc. Symp. Proc., Vol 910, paper A07-03.
  • R.J. Soukup, and N.J. Ianno, "Deposition of high quality amorphous silicon, germanium and silicon germanium thin films by hollow cathode reactive sputtering system" Surf. and Coatings Tech. 177-178, 676 (2004).
  • S.-J Cho, P.G. Snyder, N.J. Ianno, C.M. Herzinger, and B. Johs, "Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry", Thin Solid Films, 455-456, 645 (2004).
  • R.J. Soukup, N.J.; Ianno, S.A. Darveau, and C.L. Exstrom, "Thin films of a-SiGe:H with device quality properties prepared by a novel hollow cathode deposition technique" Solar Energy Materials and Solar Cells, 87, 8 (2005).