Trion Minilock-Phantom III Reactive Ion Etching (RIE) System
The Trion Minilock Phantom III RIE system is a plasma etch system with state-of-art plasma etch capability for single wafers, dies or parts. Accommodating up to six process gases (CF4, SF6, O2, Ar, Cl2, BCl3, ), this system can be used for anisotropic dry etching of films such as silicon oxide, silicon nitride, polysilicon, aluminum, GaAs and many others. This reactor can also be used to strip photoresist and other organic materials. The system is equipped with a load lock that increases user safety by preventing contact with the process chamber and any residual etch by-products. The load lock also allows the chamber to remain permanently under vacuum thereby keeping out moisture and keeping the reaction chamber free of possible corrosion.
- Plasma source: ICP and RIE
- Max RF power: 600 W
- Working Gas: CF4, SF6, O2, Ar, Cl2, BCl3
- Max wafer size: 12 inch (300 mm)